Lattice Controlled Hot Electron Mobility in 2DEG at Low Temperature

A. K. Ghorai

Abstract: Hot electron mobility characteristics in non-degenerate two-dimensional elec?tron gas (2DEG) formed in semiconductor interfaces is investigated considering simple electron temperature model at low lattice temperatures when the free electrons are dominantly scattered by the deformation potential acoustic phonons. The field dependence of electron temperature and mobility characteristics in Si(100) 2DEG are estimated and compared with other theoretical results.

Keywords: Semiconductor, 2DEG, Phonon, Hot Electron, Mobility