Experimental Investigation of Electrical Conductivity and Hall Effect on Quaternary Thallium Sulphide Tl4InGa3S8 Crystals

Jazi Abdullah Mohammed Abdulwahed

Abstract: A modified Bridgman technique has been used to grow the Tl4InGa3S8 crystal. By measuring the Hall Effect and electrical conductivity at the same time in the Tl4InGa3S8 sample in the range of 273?573 K, the conductivity type, carrier concentration, carrier mobility, diffusion coefficient, mean free time, and diffusion length for the majority carriers were identified. Our study was conducted in the 273?573 K temperature range. Our samples are n-type conducting, according to the investigation. With a Hall coefficient of 0.00327 m3/c, the room-temperature electron concentrations were discovered to be 3.4 x 1010 m-3at room temperature. Also, the Hall mobilities of Tl4InGa3S8 are determined to be 24.79 m2/V.sec at room temperature. Tl4InGa3S8's band gap has been calculated to be 0.2 eV, while the depth of the donor center was calculated to be 0.18 eV. This investigation is the first on this compound.

Keywords: Quaternary semiconductors, Tl4InGa3S8 crystal, electrical conductivity