Study on Performance of 22nm Single Gate and Multi-Gate MOSFET

Sharda P Narwade, Anish U Bhurke, Swapnali Makdey

Abstract: Scaling down of the MOSFET for better circuit density give rise to issues of poor gate control over the dependent current. Many short channel effects contribute towards indeterminist response of the drain current and eventually poor circuit performance. This effects can be overcome if the short channel effects are minimized by gate excitations and by using multiple such gates and there by providing better control over the device parameters. The gate electric field in single gate MOSFET is decreased, and multiple such gates are grown on same substrate so as to have better control over drain current, called as Multi-Gate MOSFET or FinFET. We have recreated the 22nm single gate MOSFET and same channel length multi-gate MOSFET, their performance through various parameter comparisons are evaluated and studied.

Keywords: Circuit density, FinFET, Double Gate MOSFET, Threshold, Electric Field.